Generally Applicable Self-masking Technique for Nanotips Array Fabrication

Kuei-Hsien Chen; Chih-Hsun Hsu; Hung-Chun Lo; Surojit Chattopadhyay; Chien Ting Wu; Jih-Shang Hwang; Debajyoti Das; Li-Chyong Chen

doi:10.6180/jase.2004.7.3.01

Generally Applicable Self-masking Technique for Nanotips Array Fabrication

Kuei-Hsien Chen This email address is being protected from spambots. You need JavaScript enabled to view it.^1,2, Chih-Hsun Hsu² , Hung-Chun Lo¹ , Surojit Chattopadhyay¹ , Chien Ting Wu¹ , Jih-Shang Hwang¹ , Debajyoti Das¹ and Li-Chyong Chen²

¹Institute of Atomic and Molecular Science Academia Sinica Taipei, Taiwan 106, R.O.C.
²Center for Condensed Matter Sciences National Taiwan University Taipei, Taiwan 106, R.O.C

Received: March 21, 2004
Accepted: May 20, 2004
Publication Date: September 1, 2004

Download Citation: ||https://doi.org/10.6180/jase.2004.7.3.01

ABSTRACT

Well-aligned nanotip arrays were fabricated via a self-masking dry etching technique in an electron cyclotron resonance (ECR) plasma process. Nanotip arrays of Si, poly silicon, GaN, GaP, sapphire, and Al were fabricated. Simultaneous etching of the substrate and formation of silicon carbide (SiC) protecting caps are attributed to the nanotip formation. The ultra-low turn on filed for electron field emission as well as the surface enhanced Raman Spectroscopic study of Si nanotips is also demonstrated.

Keywords: Nanotip, Field Emission, Surface Enhanced Raman Spectroscopy.

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