The Characterization and Fabrication of Pyroelectric Infrared Sensor and Application of Thermal Image Array

C.C. Chang; C.H. Lee; K.P. Chu

doi:10.6180/jase.2004.7.2.04

The Characterization and Fabrication of Pyroelectric Infrared Sensor and Application of Thermal Image Array

Electrical Engineering

C. C. Chang ¹, C. H. Lee¹ and K. P. Chu¹

¹Department of Electrical Engineering National Taiwan Ocean University Keelung, Taiwan 202, R.O.C.

Received: January 2, 2004
Accepted: January 20, 2004
Publication Date: June 1, 2004

Download Citation: ||https://doi.org/10.6180/jase.2004.7.2.04

ABSTRACT

The pyroelectric infrared (PIR) sensor with the lead-titanate (PbTiO₃) thin film has been successfully fabricated. A RF planar magnetron sputter was used to deposit PbTiO3 thin film. A perovskite thin film can be obtained. From the properties measurement we can obtain the remanent polarization Pr = 20.8 mc/cm ² and coercive electric field Ec = 79.365 kV/cm. The pyroelectric coefficient of 1.09 × 10^-5 C/m² K at 50 °C was measured as a function of temperature. In addition, the fabricated PIR sensor properties is RV = 600 (VW^-1 ) when chopper frequency is 0.3 Hz. D* = 7.3 × 105 cm Hz^1/2 W^-1 for a modulation frequency of 0.5 Hz. In this experiment, the 4 ×4 array for PIR sensor is also constructed and tested.

Keywords: Pyroelectric Infrared Sensor, Pyroelectric Coefficient, Polarization

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