Journal of Applied Science and Engineering

Published by Tamkang University Press


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Lung-Jieh Yang This email address is being protected from spambots. You need JavaScript enabled to view it.1, Chen-Chun Lai3 , Ching-Liang Dai2 , Pei-Zen Chang3

1Department of Mechanical & Electro-Mechanical Engineering, Tamkang University Tamsui, Taiwan 251, R.O.C.
2Department of Mechanical Engineering, National Chung-Hsing University, Taichung, Taiwan 402, R.O.C.
3Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan 106, R.O.C.


Received: December 3, 2004
Accepted: January 17, 2005
Publication Date: March 1, 2005

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A piezoresistive pressure sensor with a chip area of 2 mm  4 mm has been fabricated by a standard CMOS process with additional MEMS post- process. The structure layers follow the design rules of the CMOS 0.8 m DPDM (Double-Polysilicon-Double-Metal) multiple-project-wafer foundry service provided by the Chip Implementation Center, Taiwan. We used a finite element method software ANSYS to analyze the mechanical behavior of the pressure sensor and used the commercial software CADENCE to design the structure layout. After the CMOS process and the MEMS post- process, two CMOS pressure sensors with different diaphragm thickness were packaged and tested. The sensitivities of sensors were measured as 0.53 mV/atm/V and 13.1 mV/atm/V with non-linearity less than 5% (FSO), and agree with the theoretical prediction qualitatively.

Keywords: CMOS, MEMS, Post Process, Pressure Sensor


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