Journal of Applied Science and Engineering

Published by Tamkang University Press

1.30

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1.60

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J. Yu This email address is being protected from spambots. You need JavaScript enabled to view it.1,2,3, Y. Liu1,2,3, F. X. Cai1,2,3, M. Shafiei1,2,3, G. Chen1,2,3, N. Motta1,2,3, W. Wlodarski1,2,3, K. Kalantar-zadeh1,2,3 and P. T. Lai1,2,3

1Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, SAR
2School of Chemistry, Physics and Mechanical Engineering, Institute of Future Environments, Queensland University of Technology, Australia
3School of Electrical and Computer Engineering, RMIT University, Australia


 

Received: May 24, 2014
Accepted: February 22, 2014
Publication Date: March 1, 2014

Download Citation: ||https://doi.org/10.6180/jase.2014.17.1.05  


ABSTRACT


There has been significant interest in developing metal oxide films with high surface area-to-volume ratio nanostructures particularly in substantially increasing the performance of Pt/oxide/semiconductor Schottky-diode gas sensors. While retaining the surface morphology of these devices, they can be further improved by modifying their nanostructured surface with a thin metal oxide layer. In this work, we analyse and compare the electrical and hydrogen-sensing properties of MoO3 nanoplatelets coated with a 4 nm layer of tantalum oxide (Ta2O5) or lanthanum oxide (La2O3). We explain in our study, that the presence of numerous defect traps at the surface (and the bulk) of the thin high- layer causes a substantial trapping of charge during hydrogen adsorption. As a result, the interface between the Pt electrode and the thin oxide layer becomes highly polarised. Measurement results also show that the nanoplatelets coated with Ta2O5 can enable the device to be more sensitive (a larger voltage shift under hydrogen exposure) than those coated with La2O3.


Keywords: Hydrogen, Gas Sensor, Metal Oxide, Heterostructure


REFERENCES


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