The Pretreatment Effects on Gate Oxide Quality of a Trench-Typed MOSFET Device

Kuo-Liang  Jaw; Ping-Hsun Chen

doi:10.6180/jase.2008.11.3.01

The Pretreatment Effects on Gate Oxide Quality of a Trench-Typed MOSFET Device

Kuo-Liang Jaw¹ and Ping-Hsun Chen This email address is being protected from spambots. You need JavaScript enabled to view it.²

¹Mosel Vitelic Inc., Taiwan, R.O.C.
²School of Law, Washington University in St. Louis, MO, U.S.A.

Received: September 1, 2006
Accepted: May 20, 2008
Publication Date: September 1, 2008

Download Citation: ||https://doi.org/10.6180/jase.2008.11.3.01

ABSTRACT

In this article, the pretreatment effects on gate oxide quality of a trench MOSFET device were studied. The process parameters are dry etching after trench patterning, cancellation of sacrificial oxide formation, and inert gas used during gate oxide formation. TEM data were analyzed for gate profiles. Several WAT tests were done for electric verification. It is found that (1) the use of etching machine has a major effect and (2) gate formation in the N2 environment is better at gate oxide quality.

Keywords: Power Devices, Gate Oxide, Sacrificial Oxidation, Etching

REFERENCES

[1] Uesugi, T., “Power Devices for Automotive Applications Reviews of Technologies for Low Power Dissipation and High Ruggedness,” R&D Review of Toyota CRDL, Vol. 35, pp. 17 (2000).
[2] Kim, J. D. T., Roh, M., Kim, S. G., Park, I. Y., Yang, Y. S., Lee, D., Koo, W. J. G., Cho, K. I. and Kang, Y. I., “A Novel Process for Fabricating High Density Trench MOSFETs for DC-DC Converters,” ETRI Journal, Vol. 24, pp. 333340 (2002).