The Characterization and Fabrication of Pyroelectric Infrared Sensor

C. C Chang; K. P. Chu; Y. C. Lai

doi:10.6180/jase.2005.8.3.04

The Characterization and Fabrication of Pyroelectric Infrared Sensor

C. C. Chang This email address is being protected from spambots. You need JavaScript enabled to view it.¹, K. P. Chu¹ and Y. C. Lai¹

¹Department of Electrical Engineering, National Taiwan Ocean University Keelung, Taiwan 202, R.O.C.

Received: January 3, 2005
Accepted: July 20, 2005
Publication Date: September 1, 2005

Download Citation: ||https://doi.org/10.6180/jase.2005.8.3.04

ABSTRACT

The pyroelectric infrared (PIR) sensor with a calcium-modified lead titanate Pb_1-xCa_xTiO₃ thin film with x = 0.3 [PCT(30)] thin film have been successfully fabricated. A RF planar magnetron sputter was used to deposit PCT(30) thin film. A perovskite thin film can be obtained. From the properties measurement we can obtain the remanent polarization Pr = 25.3 μc/cm² and coercive electric field Ec = 52.65 KV/cm. The pyroelectric coefficient was measured as a function of temperature which was 4.13 10^-4 C/m²K at 300 degree C. For the PIR performance measurement, the voltage response of the single PIR sensor is 723.5 VW^-1 and the specific detectivity is 8.28 106 cmW^-1 at 0.3 Hz. In addition, a 2-D 8 x 8 element PIR sensor array is finished with fabricated PIR sensors.

Keywords: Pb0.7Ca0.3TiO3 (PCT(30)), Remanent Polarization, Coercive Electric Field, Pyroelectric Coefficient, Voltage Response, Specific Detectivity

REFERENCES

[1] Schnakenberg, U., Benecks, W. and Lange, P., “TMAHW Etchants for Silicon Micromachining,” Proceeding of IEEE, pp. 815818 (1991).
[2] Yamakm, E., Watanabe, H., Kimura, H., Kanaya, H. and Onkuma, H., “Structural, Ferroelectric, and Pyroelectric properties of Highly C-axis Oriented Pb1xCaxTiO3 Thin Film Grown by Radio-frequency Magnetron Sputtering,” J. Vac. Sci. Technol., Vol. A6, pp. 29212928 (1988).
[3] Whatmore, R. W., “Pyroelectric Devices and Materials,” Rep. Prog. Phys., Vol. 49, pp. 13351386 (1986).
[4] Ibraim, R. C., Sakai, T., Nishida, T., Horiuchi, T., Shiosaki, T. and Matsushige, K., “Fabrication and Evaluation of Niobium Doped Lead Titanate Thin Films,” Proceeding of the IEEE, Vol. 86 (1996).
[5] Kim, J. D., Kawagoe, S., Sasaki, K. and Hata, T., “Target for a Pb(Zr,Ti)O3 Thin Film Deposited at a Low Temperature Using a Quasi-metallic Mode of Reactive Sputtering,” Jpn. J. Appl. Phys., Vol. 38, pp. 6882 6886 (1999).
[6] Wang, C. M., Chen, Y. C., Huang, Y. T. and Kao, M. C., “Applications of Ferroelectrics,” Proc. of the 2000 12th IEEE International Symposium, (ISAF 2000), Vol. 2, pp. 771774 (2000).
[7] Chang, C. C., Lee, C. H. and Chu, K. P., “The Characterization and Fabrication of Pyroelectric Infrared Sensor and Application of Thermal Image Array,” Tamkang Journal of Science and Engineering, Vol. 7, pp. 7780 (2004).