A Study on Tunneling Current of ONO Films and Data Retention Effects in Flash Memories

Shuang-Yuan Chen; Heng-Sheng Huang; Yen-Ching Wu; Mao-Quan  Chen; Joe Ko

doi:10.6180/jase.2004.7.3.06

A Study on Tunneling Current of ONO Films and Data Retention Effects in Flash Memories

Shuang-Yuan Chen This email address is being protected from spambots. You need JavaScript enabled to view it.¹, Heng-Sheng Huang¹ , Yen-Ching Wu¹ , Mao-Quan Chen¹ and Joe Ko²

¹Institute of Mechatronics Engineering National Taipei University of Technology Taipei, Taiwan 104, R.O.C.
²Customer Integration and Engineering United Microelectronics Corporation Hsinchu, Taiwan 300, R.O.C.

Received: January 15, 2004
Accepted: May 31, 2004
Publication Date: September 1, 2004

Download Citation: ||https://doi.org/10.6180/jase.2004.7.3.06

ABSTRACT

In this research, 5 different thicknesses of oxide-nitride-oxide (ONO) inter-poly-gate dielectrics in flash memories are studied. Besides the experiments of analyzing program/erase speeds, various I-V tests have also being conducted to understand the tunneling characteristics of these ONO films. Data retention effects are also investigated by measuring the threshold voltage shifts consecutively up to 200 h of 250 ºC baking. All the findings are analyzed and concluded to propose a set of ONO film scaling rules.

Keywords: Flash Memory, ONO, Nonvolatile Memory, Data Retention.

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