Journal of Applied Science and Engineering

Published by Tamkang University Press


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Chao-Jen Ho1, Tai-Kang Shing This email address is being protected from spambots. You need JavaScript enabled to view it.1 and Li1

1Industrial Technology Research Institute Material Research Laboratory Jhudong, Taiwan 310, R.O.C.


Received: November 22, 2003
Accepted: January 12, 2004
Publication Date: March 1, 2004

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This article presents a study of the influence of the sputtering parameters on the preferred orientation of polycrystalline aluminum nitride thin films. Aluminum nitride films are deposited by reactive dc magnetron sputtering using an aluminum target in an N2/Ar gas mixture. In this study, the influences of substrate temperature and target-substrate spacing on film property will be studied. Measurements of the piezoelectric strain constant d33 are performed in order to effectively evaluate the piezoelectric characteristics of the films. X-ray diffraction (XRD) measurements are also made to investigate the influence on the AlN crystallographic orientation. The film texture index Πhkl is used to quantify how much of the film is oriented along the [hkl] direction. The calculated maximum mean d33 is 2.7 pm/V at 300°C for AlN/Mo.

Keywords: AlN, Reactive Sputtering, Characterization, Texture


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  3. [3] Cho, J. W. et al., “Measurement of the Effective Piezoelectric Constant of Nitride Thin Films and Heterostructures Using Scanning Force Microscopy ,” MRS Proceedings, Vol. 693 (2001).
  4. [4] Nalwa, H. S., “Ferroelectric and Dielectric Thin Films,” Academic Press, MA, U.S.A., p. 300 (2002).



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