Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films

I-Nan Lin; Yi-Ping Chou; Tong T.  Chen

doi:10.6180/jase.2003.6.3.02

Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films

Physics

I-Nan Lin ^1,2, Yi-Ping Chou³ and Tong T. Chen³

¹Department of Physics Tamkang University Tamsui, Taiwan 251, R.O.C.
²Material Science Center National Tsing Hua University Hsinchu, Taiwan 300, R.O.C.
³Department of Physics National Tsing Hua University Hsinchu, Taiwan 300, R.O.C.

Received: May 6, 2003
Accepted: June 10, 2003
Publication Date: September 1, 2003

Download Citation: ||https://doi.org/10.6180/jase.2003.6.3.02

ABSTRACT

Effect of boron and nitrogen co-doping on the electron field emission properties of the diamond films was examined using current image tunneling spectroscopy in atomic force microscopy (CITS, AFM). Tunneling current-voltage (It-V) characteristics measured by AFM indicate that incorporation of boron and nitrogen species induced the presence of impurity state. Such a characteristic is closely related to the local electron field emission behavior of the diamond films. The samples co-doped with 4 sccm boron and 3 sccm nitrogen possess smallest energy gap (E_g = 1.62 eV) and largest emission ratio, as compared with that of other diamond films. These diamond films can be turned on at smallest electric field (E_o = 6.4 V/µm), exhibiting largest field emission capacity (J_e = 1,500 µA/cm² ).

Keywords: Co-doped Diamond Films, Electron Field Emission Properties, Current Image Tunneling Spectroscopy

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