Chia Ying Lee1 , Tseung Yuen Tseng1 , Seu Yi Li2 and Pang Lin 2
1Department of Electronics Engineering and Institute of Electronics National Chiao Tung University Hsinchu, Taiwan, 300, R.O.C.
2Institute of Materials Science Engineering, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C.
Received:
March 31, 2003
Accepted:
April 30, 2003
Publication Date:
June 1, 2003
Download Citation:
||https://doi.org/10.6180/jase.2003.6.2.08
ABSTRACT
Single crystalline zinc oxide (ZnO) nanowires have been grown on Si (100) substrates by a vapor-liquid-solid (VLS) process at temperatures in the range 850-950 °C in an inert atmosphere. The VLS-grown ZnO nanowires have been characterized in detail using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), energy dispersive X-ray analysis (EDX) and photoluminescence spectroscopy (PL). The XRD studies revealed that the ZnO nanowires had wurtzite structure (hexagonal) with well-defined growth along [0001] direction. The composition analysis by EDX indicated the presence of small amounts of Si codeposited on the ZnO nanowires. The microscopic studies revealed a tilted configuration for ZnO nanowires on Si (100) with diameters in the range 60 to 100 nm and lengths varying between 1 to 3 µm. A strong ultraviolet emission has been observed for the ZnO nanowires as evidenced by the photoluminescence spectra at a wavelength of 381 nm.
Keywords:
Zinc Oxide, Nanowires, Vapor-Liquid-Soild Process, Photoluminescence
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