Growth and Dielectric Properties of Pb(ScTa)1-xTixO3 (PSTT) Thin Films by MOCVD Method

Chun-Hsiung  Lin; Philip A. Friddle; Cheng-Hsin Ma; Haydn Chen

doi:10.6180/jase.2002.5.1.01

Growth and Dielectric Properties of Pb(ScTa)1-xTixO3 (PSTT) Thin Films by MOCVD Method

Chun-Hsiung Lin¹ , Philip A. Friddle¹ , Cheng-Hsin Ma¹ and Haydn Chen This email address is being protected from spambots. You need JavaScript enabled to view it.²

¹Department of Materials Science & Engineering University of Illinois at Urbana-Champaign Urbana, Illinois 61801 U.S.A.
²Department of Physics and Materials Science City University of Hong Kong Kowloon, Hong Kong

Received: January 7, 2002
Accepted: February 1, 2002
Publication Date: March 1, 2002

Download Citation: ||https://doi.org/10.6180/jase.2002.5.1.01

ABSTRACT

Highly (002) textured Pb(ScTa)1-xTixO3 (PSTT) (with composition x = 0 - 0.3) thin films were deposited using metal-organic chemical vapor deposition (MOCVD) technique at temperature ranging from 600 o C to 685 ^o C. Dielectric properties of these PSTT thin films showed strong dependency on the growth temperature and PT content. Ti addition acted as a “Curie” temperature shifter, moving Tmax from –10 to 120 ^oC with the dielectric constant peak value increasing from 1397 to 1992 (measured at 1 kHz) when composition x went from 0 to 0.3. Loss tangent values were generally below 0.025. For PSTT thin films with composition near its morphotropic boundary (x = 0.3), the room temperature dielectric constants increased from 980 to around 1600 as the growth temperature increased from 650 to 685 ^o C. In addition, the dielectric dispersion behaviors of films grown at different temperatures were compared.

Keywords: PSTT Relaxor Ferroelectric, MOCVD, Thin Films, Dielectric Properties

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