G.Gulyamov2, U.I.Erkaboev1, N.A.Sayidov1, R.G.Rakhimov 1
1Namangan Institute of Engineering and Technology,160115 Namangan, Uzbekistan
2Namangan Engineering - Construction Institute, 160103 Namangan, Uzbekistan
Received:
February 23, 2020
Accepted:
April 16, 2020
Publication Date:
September 1, 2020
Download Citation:
||https://doi.org/10.6180/jase.202009_23(3).0009
ABSTRACT
A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the band gap of narrow-gap semiconductors. The calculation results are compared with experimental data.
Keywords:
Oscillations of electronic heat capacity, oscillations of magnetic susceptibility and oscillations of electrical conductivity, cyclotron effective mass.
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