The Influence of Temperature on Magnetic Quantum Effects in Semiconductor Structures

G. Gulyamov; U.I. Erkaboev; N.A. Sayidov; R.G. Rakhimov

doi:10.6180/jase.202009_23(3).0009

The Influence of Temperature on Magnetic Quantum Effects in Semiconductor Structures

Material Engineering Electrical Engineering

G.Gulyamov², U.I.Erkaboev¹, N.A.Sayidov¹, R.G.Rakhimov This email address is being protected from spambots. You need JavaScript enabled to view it.¹

¹Namangan Institute of Engineering and Technology,160115 Namangan, Uzbekistan
²Namangan Engineering - Construction Institute, 160103 Namangan, Uzbekistan

Received: February 23, 2020
Accepted: April 16, 2020
Publication Date: September 1, 2020

Download Citation: ||https://doi.org/10.6180/jase.202009_23(3).0009

ABSTRACT

A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the band gap of narrow-gap semiconductors. The calculation results are compared with experimental data.

Keywords: Oscillations of electronic heat capacity, oscillations of magnetic susceptibility and oscillations of electrical conductivity, cyclotron effective mass.

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