Journal of Applied Science and Engineering

Published by Tamkang University Press

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INFLUENCE OF ARGON AND BARIUM ION IMPLANTATION ON THE DENSITY OF STATES OF SILICON VALENCE ELECTRONS: EXPERIMENT AND THEORY

 2026

 Volume 33

B.E. Umirzakov, D.A. Tashmukhamedova, M.B. Yusupjanova, and B.O. Isakov

Tashkent State Technical University named after Islam Karimov, University Street, 2, Tashkent 100095, Uzbekistan

Received: February 6, 2026
Accepted: June 30, 2026
Publication Date: July 25, 2026

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Dependence of the shift of peak A on the dose of Ar+ions for Si(111) bombarded with Ar+ ions at Eo = 1keV.

 Copyright The Author(s). This is an open access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are cited.

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The composition, crystalline, and electronic structure of the Si(111) surface bombarded with low-energy Ar+ and Ba+ ions at various doses were studied using scanning electron microscopy, Auger electron spectroscopy, and photoelectron spectroscopy. The following cases will be analyzed: 1) The influence of formation of various chemical bonds on the appearance of new peaks in the photoelectron spectrum. 2) Influence of crystal lattice
disorder on the energy positions of the principal spectral peaks of silicon and barium silicides. The analysis reveals that disordering of the Si(111) near-surface region causes a displacement of the main silicon peak by approximately 0.3–0.4 eV, whereas the formation of BaSi and BaSi2 phases induces a more pronounced shift in the range of 0.4-0.5 eV. A simple theory is developed that makes it possible to explain the results on the change in the density of state of the valence band electrons.

Keywords: electronic structure, ion bombardment, photoelectron spectroscopy, chemical bonds, crystal lattice, silicides, composition, dose, valence electrons, annealing

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