G.Gulyamov2, U.I.Erkaboev1, N.A.Sayidov1, and R.G.Rakhimov1
1Namangan Institute of Engineering and Technology,160115 Namangan, Uzbekistan
2Namangan Engineering – Construction Institute, 160103 Namangan, Uzbekistan
Received: February 23, 2020
Accepted: April 16, 2020
Publication Date: May 10, 2026
Dependence of the de Haas-van Alphen oscillations on temperature and magnetic field in n-bi2Te2.85se0.15, calculated by formula 14
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Download Citation: BibTeX | http://dx.doi.org/10.6180/jase.202009_23(3).0009
A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the band gap of narrow-gap semiconductors. The calculation results are compared with experimental data.
Keywords: Oscillations of electronic heat capacity; oscillations of magnetic susceptibility and oscillations of electrical conductivity; cyclotron effective mass
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