The structure of PIR sensor.

C. C. Chang  1, K. P. Chu1 and Y. C. Lai1

1Department of Electrical Engineering, National Taiwan Ocean University Keelung, Taiwan 202, R.O.C.


 

Received: January 3, 2005
Accepted: July 20, 2005
Publication Date: September 1, 2005

Download Citation: ||https://doi.org/10.6180/jase.2005.8.3.04  


ABSTRACT


The pyroelectric infrared (PIR) sensor with a calcium-modified lead titanate Pb1-xCaxTiO3 thin film with x = 0.3 [PCT(30)] thin film have been successfully fabricated. A RF planar magnetron sputter was used to deposit PCT(30) thin film. A perovskite thin film can be obtained. From the properties measurement we can obtain the remanent polarization Pr = 25.3 μc/cm2 and coercive electric field Ec = 52.65 KV/cm. The pyroelectric coefficient was measured as a function of temperature which was 4.13 10-4 C/m2K at 300 degree C. For the PIR performance measurement, the voltage response of the single PIR sensor is 723.5 VW-1 and the specific detectivity is 8.28 106 cmW-1 at 0.3 Hz. In addition, a 2-D 8 x 8 element PIR sensor array is finished with fabricated PIR sensors.


Keywords: Pb0.7Ca0.3TiO3 (PCT(30)), Remanent Polarization, Coercive Electric Field, Pyroelectric Coefficient, Voltage Response, Specific Detectivity


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