{"id":6163,"date":"2026-05-10T06:31:49","date_gmt":"2026-05-09T22:31:49","guid":{"rendered":"\/jase\/?post_type=tkuisotope&p=6163"},"modified":"2026-07-03T15:13:58","modified_gmt":"2026-07-03T07:13:58","slug":"the-influence-of-temperature-on-magnetic-quantum-effects-in-semiconductor-structures","status":"publish","type":"tkuisotope","link":"\/jase\/?tkuisotope=the-influence-of-temperature-on-magnetic-quantum-effects-in-semiconductor-structures","title":{"rendered":"The Influence of Temperature on Magnetic Quantum Effects in Semiconductor Structures"},"content":{"rendered":"\n
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<\/i> 2020<\/a><\/p>\n<\/div>\n\n\n\n

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<\/i> Volume 23, Issue 3<\/a><\/p>\n<\/div>\n\n\n\n

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G.Gulyamov2<\/sup>, U.I.Erkaboev1<\/sup>, N.A.Sayidov1<\/sup>, and R.G.Rakhimov1<\/sup><\/i><\/a><\/p>\n\n\n\n

1<\/sup>Namangan Institute of Engineering and Technology,160115 Namangan, Uzbekistan<\/p>\n\n\n\n

2<\/sup>Namangan Engineering – Construction Institute, 160103 Namangan, Uzbekistan<\/p>\n<\/div>\n\n\n\n

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Received:\u00a0February 23, 2020
Accepted:\u00a0April 16, 2020
Publication Date:\u00a0May 10, 2026<\/p>\n<\/div>\n<\/div>\n\n\n\n

\"\u4e0a\u50b3\u5716\u7247\"\n\n\n

Dependence of the de Haas-van Alphen oscillations on temperature and magnetic field in n-bi2Te2.85se0.15, calculated by formula 14<\/p>\n<\/div>\n<\/div>\n\n\n\n

<\/i> Copyright <\/strong>The Author(s). This is an open access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0)<\/a>, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are cited.<\/p>\n\n\n\n

Download Citation:  BibTeX <\/a>| http:\/\/dx.doi.org\/10.6180\/jase.202009_23(3).0009<\/a>  <\/p>\n\n\n\n

Download PDF<\/a><\/p>\n\n\n\n

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A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the band gap of narrow-gap semiconductors. The calculation results are compared with experimental data.<\/p>\n\n\n\n

Keywords:\u00a0Oscillations of electronic heat capacity; oscillations of magnetic susceptibility and oscillations of electrical conductivity; cyclotron effective mass<\/em><\/p>\n\n\n\n

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