{"id":1827,"date":"2026-03-30T00:24:08","date_gmt":"2026-03-29T16:24:08","guid":{"rendered":"https:\/\/iweb20wp-b205b.url.tku.edu.tw\/jase\/?post_type=tkuisotope&p=1827"},"modified":"2026-05-21T00:09:58","modified_gmt":"2026-05-20T16:09:58","slug":"study-of-photocells-based-on-gexsi1-x-structures","status":"publish","type":"tkuisotope","link":"\/jase\/?tkuisotope=study-of-photocells-based-on-gexsi1-x-structures","title":{"rendered":"STUDY OF PHOTOCELLS BASED ON GexSi1-x STRUCTURES"},"content":{"rendered":"\n
\n
\n

<\/i> 2026<\/a><\/p>\n<\/div>\n\n\n\n

\n

<\/i> Volume 29, Issue 3<\/a><\/p>\n<\/div>\n\n\n\n

\n
\n
\n
\n

N.F. Zikrillaev, Kh. M. Iliev, G.A. Kushiev<\/i><\/a>, S.B. Isamov, S.V. Koveshnikov, B.A. Abdurakhmanov, and B.O. Isakov<\/p>\n\n\n\n

Tashkent State Technical University named after Islam Karimov, Uzbekistan, 100095, Tashkent, Universitetskaya st.2<\/p>\n<\/div>\n\n\n\n

\n

Received:\u00a0February 3, 2025
Accepted:\u00a0June 2, 2025
Publication Date:\u00a0March 30, 2026<\/p>\n<\/div>\n<\/div>\n\n\n\n

\"\u4e0a\u50b3\u5716\u7247\"\n\n\n

Elementary lattice of silicon doped with germanium with the structure in the case of x = 1, x = 0.5, x = 0.<\/p>\n<\/div>\n<\/div>\n\n\n\n

<\/i> Copyright <\/strong>The Author(s). This is an open access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0)<\/a>, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are cited.<\/p>\n\n\n\n

Download Citation:\u00a0 BibTeX <\/a>| https:\/\/doi.org\/10.6180\/jase.202603_29(3).0019<\/a>\u00a0\u00a0<\/p>\n\n\n\n

Download PDF<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

The paper presents the results of studying GexSi1\u2212x structures obtained using low-temperature diffusion technology. The presence of clusters and their composition in the silicon lattice is determined by electron microscopy and X-ray spectroscopy. The results showed that germanium atoms in the lattice are collected in the form of round islands containing Si\u2212 64.46%,Ge\u221226.9%. Between the silicon crystal and the islands there are GeX<\/sub>Si1\u2212x<\/sub> structures that can affect the photoelectric properties of silicon. It is of interest to study the parameters of solar cells in the presence of such structures. Solar cells containing Gex<\/sub>Si1\u2212x<\/sub> structures with a p-n junction depth of 6\u00f78\u00b5 m on the surface of p-type silicon with 0.5\u2126\u00b7 m were obtained. The concentration of
Gex<\/sub>Si1\u2212x<\/sub> structures was N \u2248 5.61019 cm\u22123<\/sup>, while the distance between the island structures was on average 1-2 \u00b5m. This distance is much smaller than the distance between the current-collecting contacts. Experiments have shown that the spectral sensitivity of the studied photocells with Gex<\/sub>Si1\u2212x<\/sub> structures expands toward the infrared region of the solar spectrum. This is explained by the absorption of photons by microheter ovarib and Gex<\/sub>Si1\u2212x <\/sub>\u2212Si structures.<\/p>\n\n\n\n

Keywords:\u00a0Photovoltaics; Efficiency, silicon; Renewable energy; Solar cells; Heterovarigated band structure; Diffusion; Germanium<\/em><\/p>\n\n\n\n

<\/div>\n\n\n\n
\n
    \n
  1. [1] X. Li, P. Li, Z. Wu, D. Luo, H.-Y. Yu, and Z.-H. Lu, (2020) \u201cReview and perspective of materials for flexible solar cells\u201d Materials Reports: Energy 1(1): 100001. DOI: 10.1016\/j.matre.2020.09.001.<\/li>\n
  2. [2] A. Singh, J. Tiwari, A. Yadav, and R. Jha, (2015) \u201cMATLAB User Interface for Simulation of Silicon Germanium Solar Cell\u201d Journal of Materials: 1\u20136. DOI: 10.1155\/2015\/840718.<\/li>\n
  3. [3] K. Mukul and S. Choudhary, (2012) \u201cGe-content Dependent Efficiency of Si\/SiGe Heterojunction Solar cell\u201d Applied Physics A 112(3): 1\u20139. DOI: 10.1007\/s00339-013-7761-9.<\/li>\n
  4. [4] J. Huml\u00ed\u010dek, M. Garriga, M. I. Alonso, and M. Cardona, (1989) \u201cOptical spectrum of SixGe1-x alloys\u201d Journal of Applied Physic 65(7): 2827\u20132832. DOI: 10.1063\/1.342720.<\/li>\n
  5. [5] A. Leiderman, A. Saidov, and A. Karshiev, (2016) \u201cThe thermoelectric effect in a graded-gap nSi \u2013p Si1\u2013xGex heterostructure\u201d Applied Solar Energy 52(2): 115\u2013117.<\/li>\n
  6. [6] G. Yang, X. Huang, and B. Wang, (2018) \u201cFabrication and Anti-Oxidation Ability of SiC-SiO2 Coated Carbon Fibers Using Sol-Gel Method\u201d Materials 11(3): 350. DOI: 10.3390\/ma11030350.<\/li>\n
  7. [7] X. Sun, H. Guo, Y. Zhang, X. Li, and Z. Cao, (2021) \u201cEffects of Carbon Impurity in Monocrystalline Silicon on Electrical Properties and the Mechanism Analysis of PIN Rectifier Diodes\u201d IEEE Access: DOI: 10.1109\/ACCESS.2021.3055279.<\/li>\n
  8. [8] B. Jalali and S. Fathpour, (2006) \u201cSilicon photonics\u201d Journal of lightwave technology 24(12): 4600\u20134615. DOI: 10.1109\/jlt.2006.1638290.<\/li>\n
  9. [9] N. Morozova, I. Korobeinikov, N. Abrosimov, and S. Ovsyannikov, (2020) \u201cControlling the thermoelectric power of silicon\u2013germanium alloys in different crystalline phases by applying high pressure\u201d Cryst Eng Comm: DOI: 10.1039\/d0ce00672f.<\/li>\n
  10. [10] B. Cook, (2022) \u201cSilicon-Germanium \u2013 The Legacy Lives On\u201d Energies 15(8): 2957. DOI: 10.3390\/en15082957.<\/li>\n
  11. [11] M. Das and S. Choudhary. \u201cGe-content dependent efficiency of Si\/SiGe heterojunction solar cell\u201d. In: Proceeding of the Photonics Global Conference (PGC ’12). Singapore, 2012, 1\u20134.<\/li>\n
  12. [12] Y. Bogumilowicz, J.-M. Hartmann, F. Laugier, G. Rolland, T. Billon, V. Renard, E. Olshanetsky, O. Estibals, Z. Kvon, and J. Portal, (2003) \u201cReduced Pressure-Chemical Vapor Deposition of high Ge content (20%-55%) SiGe virtual substrates\u201d MRS Online Proceedings Library 809(1): 19.<\/li>\n
  13. [13] D. Duveau, B. Fraisse, L. Cunin, and L. Monconduit, (2015) \u201cSynergistic Effects of Ge and Si on the Performance and Mechanism of the GexSi1\u2212x Electrodes for Li-Ion Batteries\u201d Chemistry of Materials 27(9): 3226\u20133233. DOI: 10.1021\/cm504413g.<\/li>\n
  14. [14] N. Zikrillaev, G. Kushiev, S. Isamov, B. Abdurakhmanov, and O. Tursunov, (2023) \u201cPhotovoltaic Properties of Silicon Doped with Manganese and Germanium\u201d Journal of Nano- and Electronic Physics 15(1): 01021. DOI: 10.21272\/jnep.15(1).01021.<\/li>\n
  15. [15] N. Zikrillaev, G. Kushiev, S. Koveshnikov, B. Abdurakhmanov, U. Kurbanova, and A. Sattorov, (2023) \u201cCurrent status of silicon studies with GexSi1-x binary compounds and possibilities of their applications in electronics\u201d East European Journal of Physics (3): 334\u2013339. DOI: 10.26565\/2312-4334-2024-2-48.<\/li>\n
  16. [16] A. Singh, M. Kumar, D. Kumar, and S. Singh, (2020) \u201cHeterostructure Silicon and Germanium Alloy Based Thin Film Solar Cell Efficiency Analysis\u201d IJ Engineering and Manufacturing 2: 29\u201340. DOI: 10.5815\/ijem.2020.02.03.<\/li>\n
  17. [17] B. Abdurakhmanov, K. Iliev, S. Tachilin, and A. Toshev, (2012) \u201cSilicon Solar Cells with Si\u2013Ge Microheterojunctions\u201d Mikroelektronika 41(3): 188\u2013190. DOI: 10.1134\/S1063739712020023.<\/li>\n
  18. [18] N. Zikrillaev, G. Kushiev, S. Hamrokulov, and Y. Abduganiev, (2023) \u201cOptical Properties of GexSi1-x binary compounds in silicon\u201d Journal of Nano- and Electronic Physics 15(3): 03024-1 \u2013 03024-4. DOI: 10.21272\/jnep.15(3).03024.<\/li>\n
  19. [19] M. Bakhadirkhanov, B. Abdurakhmanov, and H. Zikrillaev, (2018) \u201cOn the state of germanium in silicon under conditions of low-temperature diffusion\u201d Devices (5): 39\u201343.<\/li>\n
  20. [20] L. Miglio and F. Montalenti. \u201cModeling the evolution of germanium islands on silicon (001) thin films\u201d. In: Silicon\u2212Germanium (SiGe) Nanostructures. 2011, 211\u2013246. DOI: 10.1533\/97808057091420.2.211.<\/li>\n
  21. [21] N. Guerram, M. Guevara, C. Palacios, and F. Crupi, (2018) \u201cOperation and Physics of Photovoltaic Solar Cells: an overview\u201d Revista de I+D Tecnol\u00f3gico 14(2): 84\u201395. DOI: 10.33412\/idt.v14i2.2077.<\/li>\n
  22. [22] D. Paul, P. See, and I. Zozoulenko, (2000) \u201cSi\/SiGe electron resonant tunneling diodes\u201d Applied Physics Letters 77: 1653. DOI: 10.1063\/1.1309020.<\/li>\n
  23. [23] K. Kacha, F. Djeffal, T. Bentrcia, M. Meguellati, and M. Chahdi. \u201cImproving the Efficiency of Thin-film SiGe Solar Cells Through the Optimization of Intrinsic Layer Parameters\u201d. In: Proceedings of the World Congress on Engineering. 1. 2014, 1\u20133.<\/li>\n<\/ol>\n<\/div>\n\n\n\n

    <\/p>\n","protected":false},"author":3,"template":"wp-custom-template-detail-4-aricles","meta":{"_uag_custom_page_level_css":""},"categories":[12,15,6,118],"tags":[186],"acf":[],"uagb_featured_image_src":[],"uagb_author_info":{"display_name":"\u6797\u923a\u6db5","author_link":"\/jase\/?author=3"},"uagb_comment_info":0,"uagb_excerpt":" Copyright The Author(s). This is an open access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are cited. Download Citation:\u00a0 BibTeX | https:\/\/doi.org\/10.6180\/jase.202603_29(3).0019\u00a0\u00a0 Download PDF The paper presents the results of studying GexSi1\u2212x structures obtained using…","_links":{"self":[{"href":"\/jase\/index.php?rest_route=\/wp\/v2\/tkuisotope\/1827"}],"collection":[{"href":"\/jase\/index.php?rest_route=\/wp\/v2\/tkuisotope"}],"about":[{"href":"\/jase\/index.php?rest_route=\/wp\/v2\/types\/tkuisotope"}],"author":[{"embeddable":true,"href":"\/jase\/index.php?rest_route=\/wp\/v2\/users\/3"}],"wp:attachment":[{"href":"\/jase\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=1827"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"\/jase\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=1827"},{"taxonomy":"post_tag","embeddable":true,"href":"\/jase\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=1827"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}