{"id":11003,"date":"2026-09-05T13:45:03","date_gmt":"2026-09-05T05:45:03","guid":{"rendered":"\/jase\/?post_type=tkuisotope&p=11003"},"modified":"2026-09-14T18:18:30","modified_gmt":"2026-09-14T10:18:30","slug":"study-of-electrical-transport-properties-in-thermally-evaporated-cu2s-thin-films","status":"publish","type":"tkuisotope","link":"\/jase\/?tkuisotope=study-of-electrical-transport-properties-in-thermally-evaporated-cu2s-thin-films","title":{"rendered":"Study of Electrical Transport Properties in Thermally Evaporated Cu2S Thin Films"},"content":{"rendered":"\n
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<\/i> 2012<\/a><\/p>\n<\/div>\n\n\n\n

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<\/i> Volume 15, Issue 4<\/a><\/p>\n<\/div>\n\n\n\n

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M. Ramya1<\/sup><\/i><\/a> and S. Ganesan2<\/sup><\/p>\n\n\n\n

1<\/sup>Department of Physics, Sri Shakthi Institute of Engg. & Tech., Coimbatore 641 062, Tamil Nadu, India<\/p>\n\n\n\n

2<\/sup>Department of Physics, Government College of Technology, Coimbatore 641 013, Tamil Nadu, India<\/p>\n<\/div>\n\n\n\n

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Received:\u00a0August 10, 2011
Accepted:\u00a0March 13, 2012
Publication Date:\u00a0Decmber 1,2012<\/p>\n<\/div>\n<\/div>\n\n\n\n

\"\u4e0a\u50b3\u5716\u7247\"\n\n\n

Variation of current vs. square root of applied field measured at different temperature for Cu2<\/sub>S film of 1000 \u00c5 thickness.<\/p>\n<\/div>\n<\/div>\n\n\n\n

<\/i> Copyright <\/strong>The Author(s). This is an open access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0)<\/a>, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are cited.<\/p>\n\n\n\n

Download Citation:  BibTeX <\/a>| http:\/\/dx.doi.org\/10.6180\/jase.2012.15.4.12<\/a>  <\/p>\n\n\n\n

Download PDF<\/a><\/p>\n\n\n\n

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Cu2<\/sub>S was synthesized by vacuum evaporation under a pressure of 10-6<\/sup> torr at an evaporation rate of 3 \u00c5\/sec. The electrical properties of Cu2<\/sub>S thin film were studied using current-voltage characteristics. The conductivity was found to exhibit two distinct mechanisms within the applied field i.e., low voltage region and high voltage region. The most probable conduction mechanism prevailing in Cu2<\/sub>S thin film is found to be Poole-Frenkel effect. Activation energy has been calculated for different thicknesses and is found that activation energy decreases with increase in film thickness. Dielectric constant of the film was measured using impedance analyzer. Plot of dielectric constant vs. frequency shows normal dielectric behavior of the film. Photocurrent of Cu2<\/sub>S film increases with increase in film thickness.<\/p>\n\n\n\n

Keywords: I-V Characteristics; C-V Characteristics; Dielectric Effect; Photocurrent<\/em><\/p>\n\n\n\n

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